t330p www.vishay.com vishay semiconductors rev. 1.0, 16-jan-12 1 document number: 83490 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode description t330p chip is a pin photodiode with 0.23 mm 2 sensitive area, high speed and high photo sensitivity. it is sensitive to the visible and near infrared light spectrum with a peak sensitivity at 900 nm. anode is the bond pad on top, cathode is the backside contact. features ? package type: chip ? package form: single chip ? dimensions (l x w x h in mm): 0.67 x 0.67 x 0.28 ? wafer diameter (in mm): 100 ? radiant sensitive area (in mm 2 ): 0.23 ? peak sensitivity wavelength: 900 nm ? high photo sensitivity ? high radiant sensitivity ? suitable for visible light an d near infrared radiation ? fast response times ? angle of half sensitivity: ? = 60 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? high speed photo detector general information the datasheet is based on vishay optoel ectronics sample testing un der certain predete rmined and assumed conditions, and is provided for illustration purpose only. customers are encourag ed to perform testing in actu al proposed packaged and used conditions. vishay optoelectronics die products are tested us ing vishay optoelectronics based quality assurance procedures and are manufactured using vishay optoelectronics established processes. estimates such as th ose described and set forth in this datasheet for semiconductor die will vary depending on a nu mber of packaging, handling, use, and other factors. therefore sold die may not perform on an equivale nt basis to standard package products. note ? test conditions see table basic characteristics note ? moq: minimum order quantity product summary component i ra (a) ? (deg) 0.1 (nm) t330p 2.3 60 430 to 1100 ordering information ordering code packaging remarks package form T330P-SD-F wafer sawn on foil with disco frame moq: 55 000 pcs chip absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg1 - 40 to + 100 c storage temperature range on foil t stg2 - 40 to + 50 c
t330p www.vishay.com vishay semiconductors rev. 1.0, 16-jan-12 2 document number: 83490 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? the measurements are based on samples of die which are mounted on a to-header without resin coating basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - diode capacitance vs. reverse voltage fig. 2 - relative spectral sensitivity vs. wavelength basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 0.1 3 na diode capacitance v r = 5 v, f = 1 mhz, e = 0 c d 1.3 pf reverse light current e v = 100 lx, cie illuminant a, v r = 5 v i ra 2.3 a angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 900 nm range of spectral bandwidth 0.1 430 to 1100 nm rise time v r = 10 v, r l = 50 , = 820 nm t r 4ns fall time v r = 10 v, r l = 50 , = 820 nm t f 4ns 0 2 4 6 8 0.1 c d - diode capacitance (pf) v r - reverse voltage (v) 94 8430 e = 0 f = 1 mhz 100 10 1 350 550 750 950 0 0.2 0.4 0.6 0.8 1.0 1150 94 8420 - wavelength (nm) s( ) rel - relative spectral sensitivit y mechanical dimensions parameter symbol min. typ. max. unit length of chip edge (x-direction) l x 0.67 mm length of chip edge (y-direction) l y 0.67 mm sensitive area a s 0.23 mm 2 wafer diameter d 100 mm die height h 0.265 0.28 0.295 mm bond pad anode x * y 0.1 x 0.1 mm 2
t330p www.vishay.com vishay semiconductors rev. 1.0, 16-jan-12 3 document number: 83490 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? all chips are checked in accordance with the vishay semicond uctor, specificat ion of visual inspection fvov6870. the visual inspection shall be made in accordance with the specifi cation of visual inspection as referenced. the visual inspe ction of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. the quality inspection (final visual inspection) is performed by production. an additional visual inspection step as special re lease procedure by qm is not installed. handling and storage conditions ? the hermetically sealed shipment lots shall be opened in temperature and moistu re controlled cleanroom environment only. it is mandatory to follow the rules for disposition of ma terial that can be hazardous for humans and environment. ? product must be handled only at esd safe workstations. standard esd precautio ns and safe work environments are as defined in mil-hdbk-263. ? singulated die are not to be handled with tweezers. a vacuum wand with non meta llic esd protected tip should be used. packing chips are fixed on adhesive foil. upon request the foils can be mounted on plastic frame or disco frame. for shipment, the wafers are arranged to stacks and hermetically sealed in pl astic bags to ensure protection against environmental influence (humidity and contamination). use for recycling reliable operators only. we can help getting in touch with your nearest sales offi ce. by agreement we will ta ke back packing material, if it is sorted. you will have to bear the costs of transport. we will invoice you for any costs incurre d for packing material that is re turned unsorted or which we are not obliged to accept. additional information frontside metallization, anode alsi backside metallization, cathode niv-ag dicing sawing die bonding technology epoxy bonding
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